Epitaxial Lateral Overgrowth of GaN on Sapphire Substrate Using High-Dose N+-Ion-Implantation.

MLA

Bumjoon Kim, et al. “Epitaxial Lateral Overgrowth of GaN on Sapphire Substrate Using High-Dose N+-Ion-Implantation.” Journal of The Electrochemical Society, vol. 157, no. 12, Dec. 2010, pp. H1132–34. EBSCOhost, https://doi.org/10.1149/1.3503539.

APA

Bumjoon Kim, Samseok Jang, Sangil Kim, Youngseok Kim, Jaesang Lee, & Dongjin Byun. (2010). Epitaxial Lateral Overgrowth of GaN on Sapphire Substrate Using High-Dose N+-Ion-Implantation. Journal of The Electrochemical Society, 157(12), H1132–H1134. https://doi.org/10.1149/1.3503539

Chicago

Bumjoon Kim, Samseok Jang, Sangil Kim, Youngseok Kim, Jaesang Lee, and Dongjin Byun. 2010. “Epitaxial Lateral Overgrowth of GaN on Sapphire Substrate Using High-Dose N+-Ion-Implantation.” Journal of The Electrochemical Society 157 (12): H1132–34. doi:10.1149/1.3503539.