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Carrier Removal Rates and Deep Traps in Neutron Irradiated n-GaN Films.
- Source :
- Journal of The Electrochemical Society; 2011, Vol. 158 Issue 9, pH866-H871, 6p, 8 Graphs
- Publication Year :
- 2011
-
Abstract
- Carrier removal rates and deep trap spectra were measured in neutron irradiated n-GaN samples grown by metalorganic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE, and epitaxial lateral overgrowth (ELOG). The carrier removal rates were found to significantly increase with donor doping and to decrease in the sequence MOCVD/ ELOG/ HVPE. The most prominent traps created by irradiation were quasi-holc traps with energy 0.6-0.7 eV and electron traps with energy 0.45 eV. The former were associated with disordered regions in GaN and determine the carrier removal rate in undoped films. The latter were attributed to radiation defect complexes with shallow donors. [ABSTRACT FROM AUTHOR]
- Subjects :
- NEUTRON irradiation
HYDRIDES
EPITAXY
THIN films
ELECTROCHEMISTRY
Subjects
Details
- Language :
- English
- ISSN :
- 00134651
- Volume :
- 158
- Issue :
- 9
- Database :
- Supplemental Index
- Journal :
- Journal of The Electrochemical Society
- Publication Type :
- Academic Journal
- Accession number :
- 65090293
- Full Text :
- https://doi.org/10.1149/1.3607986