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Thermal Stability of Thin Compressively Strained Ge Surface Channels Grown on Relaxed Si0.2Ge0.8 Reverse-Graded Buffers.
- Source :
- Journal of The Electrochemical Society; 2012, Vol. 159 Issue 5, pH490-H496, 7p
- Publication Year :
- 2012
-
Abstract
- The thermal stability of thin (110 nm) compressively strained Ge surface channels, grown by reduced-pressure chemical vapor deposition on high quality relaxed Si<subscript>0.2</subscript>Ge<subscript>0.8</subscript> reverse-graded buffers, has been investigated using in-situ hydrogen annealing at temperatures up to 650°C. Strain relaxation was observed and found to increase for thicker channels and higher anneal temperatures. For a Ge channel thickness ⩽45 nm, an increased surface roughening was found to dominate the strain relaxation process, which culminated in islanding. For the thicker (⩾45 nm) Ge channels misfit dislocation generation appeared to be the most dominant mechanism. Our results show that low thermal budgets (T < 550°C) should be employed for the fabrication of ~0.65% lattice mismatch strained Ge channels currently being developed for applications in CMOS-based devices and strained Ge-on-insulator platforms. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00134651
- Volume :
- 159
- Issue :
- 5
- Database :
- Supplemental Index
- Journal :
- Journal of The Electrochemical Society
- Publication Type :
- Academic Journal
- Accession number :
- 74560089
- Full Text :
- https://doi.org/10.1149/2.063205jes