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Role of Rare Earth Ions in Anodic Gate Dielectrics for Indium-Zinc-Oxide Thin-Film Transistors.
- Source :
- Journal of The Electrochemical Society; 2012, Vol. 159 Issue 5, pH502-H506, 5p
- Publication Year :
- 2012
-
Abstract
- Al-alloys and their anodic oxides were used as the gate and the gate dielectric, respectively, for the indium-zinc-oxide (IZO) thin-film transistors (TFTs). The influence of the Al-alloys on the performances of the IZO-TFTs was investigated. It was found that the hillock formation could be completely suppressed by doping neodymium (Nd) or cerium (Ce) into Al. However, the mobility of the IZO-TFT with Al-Ce gate was only 2 × 10<superscript>-4</superscript> cm<superscript>2</superscript> V<superscript>-1</superscript> s<superscript>-1</superscript>, about five orders lower than that of the IZO-TFT with Al-Nd gate (11.6 cm<superscript>2</superscript> V<superscript>-1</superscript> s<superscript>-1</superscript>). Further analysis showed that Ce<superscript>3+</superscript> and Ce<superscript>4+</superscript> ions were existence in the oxide film obtained by anodizing Al-Ce alloy, and they would diffuse into IZO film. The Ce<superscript>4+</superscript> ion could act as an electron trap due to its strong oxidizability, so the IZO-TFTs with Al-Ce gate would experience seriously degradation. In the case of the oxide film obtain by anodizing Al-Nd alloy, only Nd<superscript>3+</superscript> were found, which was stable and would not produce electron traps. Moreover, the existence of Nd would suppress undesirable free electron formation in the channel, resulting in low off-current, low subthreshold swing, little hysteresis, and high electrical stability under gate bias stress. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00134651
- Volume :
- 159
- Issue :
- 5
- Database :
- Supplemental Index
- Journal :
- Journal of The Electrochemical Society
- Publication Type :
- Academic Journal
- Accession number :
- 74560091
- Full Text :
- https://doi.org/10.1149/2.jes038205