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Integration of Al2O3 as Front and Rear Surface Passivation for Large-Area Screen-Printed P-Type Si PERC.
- Source :
- Energy Procedia; Nov2012, Vol. 27, p325-329, 5p
- Publication Year :
- 2012
-
Abstract
- Abstract: Atomic layer deposition (ALD) of thin Al2O3 (≤ 10nm) films is used to improve both front and rear surface passivation of large-area screen-printed p-type CZ Si passivated emitter and rear cells (PERC). As emitter passivation, the SiNx anti reflection coating (ARC) is capped with Al2O3, giving improved hydrogenation during co-firing and a front recombination current (J0,front) of 128 ± 5 fA/cm<superscript>2</superscript>. As rear surface passivation, a blister-free stack of Al2O3/SiOx/SiNx is employed, leading to optimal back reflection and a rear recombination current (J0,rear) of 92 ± 6 fA/cm<superscript>2</superscript>. Internal quantum efficiency (IQE) measurements clearly confirm the improved passivation properties of both Al2O3-based stacks, even compared to passivation stacks based on thermally grown SiO2. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 18766102
- Volume :
- 27
- Database :
- Supplemental Index
- Journal :
- Energy Procedia
- Publication Type :
- Academic Journal
- Accession number :
- 79485959
- Full Text :
- https://doi.org/10.1016/j.egypro.2012.07.071