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Damage-free and Atomically-flat Finishing of Single Crystal SiC by Combination of Oxidation and Soft Abrasive Polishing.
- Source :
- Procedia CIRP; Apr2014, Vol. 13, p203-207, 5p
- Publication Year :
- 2014
-
Abstract
- Abstract: Plasma-assisted polishing (PAP), which combined the irradiation of atmospheric-pressurewater vapor plasma and ceria abrasive polishing, was proposed for the finishing of difficult-to-machine materials, such as single crystal SiC, GaN, sapphire and diamond. In the case of PAP was applied to a 4H-SiC-Si face, an oxide layer (SiO<subscript>2</subscript>) was generated after plasma irradiation and it was removed by polishing using soft abrasives. In this way, a damage-free and atomically-flat 4H-SiC-Si face could be obtained. In this study, soft abrasive polishing (CeO<subscript>2</subscript>)of a plasma-oxidized SiC-Si face and a thermally oxidized SiC-C face was respectively conducted. The generation of a well-ordered one-bilayer step-terrace structure on both of the polished Si face and C face was confirmed by atomic force microscopy (AFM). However, due to the high temperature of thermal-oxidation, many pits were generated on SiC-C face after polishing. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 22128271
- Volume :
- 13
- Database :
- Supplemental Index
- Journal :
- Procedia CIRP
- Publication Type :
- Academic Journal
- Accession number :
- 96189939
- Full Text :
- https://doi.org/10.1016/j.procir.2014.04.035