Three Dimensional Spin-orbit Interaction Model and Simulation of the Electron Lande Factor in Small Semiconductor Quantum Dots.

In this paper a theoretical study was made of the electron Landé factor (g-factor) in self-assembled semiconductor quantum dots. Using two different models for the Rashba spin-orbit interaction (full three dimensional and "adiabatic" two dimensional) and previously proposed mapping method the impact of the spin-orbit interaction on the g-factor anisotropy has been investigated. The study is suited to clarify the important question of which approximation can explain and reproduce the build-in three dimensional anisotropy of the electron g-factor in semiconductor quantum dots. We theoretically show that the full three dimensional description is essential in g-factor simulations. The simulated magnitude of the electron g-factor and the factor anisotropy ratio are in a good agreement with the experimental observations. [ABSTRACT FROM AUTHOR]