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Low temperature crystallization of SrBi2Ta2O9 (SBT) films
- Source :
- Integrated Ferroelectrics; October 2000, Vol. 30 Issue: 1 p103-110, 8p
- Publication Year :
- 2000
-
Abstract
- 650°C process of SrBi2Ta2O9 (SBT) has been achieved through the use of new metal organic deposition (MOD) solution and the optimization of the deposition conditions. The sample showed a high remnant polarization (2Pr) of 14 μC/cm2 @3V, a low leakage current of 10-8 A/cm2 or less @3V, and a fatigue-free nature. We believe this processing will realize high-density FeRAM integration of SBT.
Details
- Language :
- English
- ISSN :
- 10584587 and 16078489
- Volume :
- 30
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Integrated Ferroelectrics
- Publication Type :
- Periodical
- Accession number :
- ejs11322579
- Full Text :
- https://doi.org/10.1080/10584580008222258