SBT-based ferroelectric FET for nonvolatile non-destructive read out (NDRO) memory applications

SrBi2Ta2O9 based Ferroelectric FETs with a CeO2 buffer layer deposited by Metal Organic Decomposition (MOD) were fabricated on p-Si (100) substrate and analyzed in detail. The hysterisis curve (drain current vs. gate voltage) of the FET shows the counter-clockwise direction, which demonstrates the change of channel conductivity due to the ferroelectric polarization. The memory window with the gate voltage of ±10V was 2V. The difference of current ratio of Ids(on) to Ids(off) was 5∼7 orders in magnitude which is easily sensed by sense amplifiers. The charges of "on" state stored decay logarithmically with time without severe initial loss of data. This indicates the FET-FeRAM can be implemented in NDRO applications.