Flat-band voltage and breakdown in single-grained ferroelectric thin film capacitors

Single-grained ferroelectric Pb(Zr, Ti)O3(PZT) thin films, with thickness varying from 0.1 to 0.7μm, were prepared on Pt-coated silicon substrates by pulsed laser deposition combined with rapid thermal annealing method. The current-voltage characteristics of the Pt/PZT/Pt capacitors, with various thickness of PZT, were measured. Two important turning points in J-V curves, namely flat-band voltage and breakdoiwn voltage according to the totaly minority-carrier injection model, were discussed. The electrical strength of the film was also studied by applying the square test pulses with different pulser duration.