Low-Temperature Preparation of PbZrTiO 3 /TiNi/Si Heterostructures by Laser Annealing

In this study, the PbZr 0.52 Ti 0.48 O 3 (PZT) thin films were prepared by a sol-gel route and spin coated on TiNi-films pre-coated Si substrates, Tini/Si, is both the bottom electrode and the substrate. XRD patterns of 630 -furnace annealed PZT/TiNi/Si films exhibit complicated mixed phases of titanium oxide and nickel oxide diffraction peaks due to the high-temperatures and an oxidizing atmosphere during PZT crystallization. A low-temperature process using CO 2 laser annealing was employed to treat the PZT/TiNi heterostructures. Additionally, a Pt diffusion barrier was deposited between PZT and TiNi to prevent interactions during PZT pyrolysis at 400 . After laser annealing, PZT films crystallized into the perovskite phase and secondary ion mass spectroscopic measurements imply that the interactions between the PZT and the TiNi films could be reduced pronouncedly by introducing the Pt layer. On the other hand, the dielectric constants increase and tan i is reduced when PZT/Pt/TiNi/Si films are subjected to laser annealing with simultaneous substrate heating.