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5 V, 10 Gbit/s optical receiver module using Si-bipolar IC
- Source :
- Electronics Letters; December 2000, Vol. 36 Issue: 25 p2085-2087, 3p
- Publication Year :
- 2000
-
Abstract
- A 10 Gbit/s optical receiver module using a Si-bipolar IC has been developed. For low power and low cost, a pure Si-bipolar IC is used in place of a GaAs IC, which is commonly used for over 10 Gbit/s. To widen the frequency bandwidth, multifeedback techniques and a two-stage buffer configuration are used in the preamplifier IC. In addition, a differential circuit configuration is used for stable operation at high frequency. The IC was fabricated using 0.25 µm Si-bipolar technology. The module exhibits sensitivity of < –16 dBm for 10 Gbit/s data with an input dynamic range > 15 dB. Small power consumption of 410 mW is achieved with the single power-supply voltage of +5 V.
Details
- Language :
- English
- ISSN :
- 00135194 and 1350911X
- Volume :
- 36
- Issue :
- 25
- Database :
- Supplemental Index
- Journal :
- Electronics Letters
- Publication Type :
- Periodical
- Accession number :
- ejs11987006