Pulsed laser deposition of PZT/BaRuO3 BI-Layered films on silicon substrate

Bi-layered thin films of PZT(70/30) on BaRuO3 have been prepared on silicon substrate by ArF excimer laser deposition(PLD). BaRuO3 thin film crystallized into perovskite-like structure with (110) orientation and became highly conductive after atmospheric thermal annealing at 700°C for 30 minutes. It was found the subsequent PLD-deposited PZT film can be efficiently transformed to its perovskite structure by rapid thermal processing(RTP) at 700°C for 100sec