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Mixed-valent states of rare-earth dopants in IV-VI semiconductors
- Source :
- Inorganic Materials; May 2000, Vol. 36 Issue: 5 p524-526, 3p
- Publication Year :
- 2000
-
Abstract
- Mixed-valent states of rare-earth dopants in narrow-gap IV-VI semiconductors are analyzed. A theoretical approach to describing rare-earth-doped IV-VI semiconductors is proposed in which the dopant is considered a strongly correlated system, with electronic states coupled to conduction- and valence-band states. The results are illustrated by the example of the Yb dopant, having an almost-filledfshell. It is shown that the system can be described by a narrow resonance level, whose position and width depend on the chemical potential and band gap. The possibility of the formation of mixed-valent states is demonstrated.
Details
- Language :
- English
- ISSN :
- 00201685 and 16083172
- Volume :
- 36
- Issue :
- 5
- Database :
- Supplemental Index
- Journal :
- Inorganic Materials
- Publication Type :
- Periodical
- Accession number :
- ejs13436896
- Full Text :
- https://doi.org/10.1007/BF02758064