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Dielectric relaxation in Bi12SiO20: Cr crystals
- Source :
- Physics of the Solid State; April 2000, Vol. 42 Issue: 4 p689-693, 5p
- Publication Year :
- 2000
-
Abstract
- Abstract: A study is reported of the temperature and frequency dependences of the permittivity and losses in Cr-doped Bi<subscript>12</subscript>SiO<subscript>20</subscript> crystals at sonic frequencies and in the range 300–800 K. A number of dielectric anomalies and a close-to-linear Cole-Cole diagram have been observed. The results are discussed by invoking the concepts of electron hopping and screening of the induced polarization through the relaxation of local lattice distortions.
Details
- Language :
- English
- ISSN :
- 10637834 and 10906460
- Volume :
- 42
- Issue :
- 4
- Database :
- Supplemental Index
- Journal :
- Physics of the Solid State
- Publication Type :
- Periodical
- Accession number :
- ejs14000276
- Full Text :
- https://doi.org/10.1134/1.1131271