Acceptor state formation in arsenicdoped ZnO films grown using ozone

The optical and transport properties of Asdoped ZnO films are examined. The films are grown by pulsedlaser deposition using As2O3as the source of As and O3O2as the oxidant. The films are epitaxial, single phase, and oriented in the ZnO [002] direction. Low temperature photoluminescence spectra at 20 K show for the formation of acceptor states associated with the As, although Hall measurements indicate that the films doped with 0.2 at As are ntype. From the photoluminescence spectra, the binding energy of the Asrelated acceptor was estimated to be 155 meV. © 2008 WILEYVCH Verlag GmbH & Co. KGaA, Weinheim