Interstitial related defect of12B implanted into n- and p-type silicon

ß-radiation detected nuclear magnetic resonance (ß-NMR) measurements of¹²B occupying sites with noncubic surroundings after implantation into Si have been extended from p-type to moderately doped n-type material. The quadrupole split signals observed in both materials indicate the existence of the same interstitial related boron defect but with lower thermal stability in n-type Si.