Ti5Si4Nanobats with Excellent Field Emission Properties

Bat-shaped nanorods (nanobats) of Ti5Si4were grown on titanium foil by a vapor and condensation method without catalysts. The average diameter of the heads and the tails of the nanobats as well as the length of the nanobats are 25, 15, and 350 nm, respectively. The resistivity of the Ti5Si4nanobat was measured to be 348 Ωμ·cm. Excellent field emission properties were found with the turn-on voltage of the Ti5Si4nanobats at the current density of 1 μA/cm2being 1.47 V/μm and field amplification factor being as high as 1350. The possession of remarkable field emission properties indicates that the Ti5Si4nanobats may be applicable as emitters in flat panel display and vacuum microelectronic devices.