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Novel Cap Annealing Process for SiC Crystal Using ECR-Sputtered Carbon Films and ECR Plasma Ashing
- Source :
- Materials Science Forum; April 2010, Vol. 645 Issue: 1 p725-728, 4p
- Publication Year :
- 2010
-
Abstract
- A high dose impurity doping process for 4H-SiC crystals has been developed using electron cyclotron resonance (ECR) sputtered carbon cap film and ECR plasma ashing. ECR-sputtered carbon films are newly found crystalline carbon films of which the hardness is comparable to that of diamonds. Since this carbon film showed such a high thermal tolerance that the hardness did not change after 1900oC annealing, this carbon cap film worked well for suppressing roughening during annealing for aluminum-ion implanted 4H-SiC. Cap carbon film can be removed successfully by using high density ECR plasma ashing.
Details
- Language :
- English
- ISSN :
- 02555476 and 16629752
- Volume :
- 645
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Materials Science Forum
- Publication Type :
- Periodical
- Accession number :
- ejs22666312
- Full Text :
- https://doi.org/10.4028/www.scientific.net/MSF.645-648.725