Planar Metal--Oxide--Semiconductor Field-Effect Transistors with Raised Source and Drain Extensions Fabricated by In situBoron-Doped Selective Silicon Epitaxy

MLA

Kikuchi, Yoshiaki, et al. “Planar Metal--Oxide--Semiconductor Field-Effect Transistors with Raised Source and Drain Extensions Fabricated by In SituBoron-Doped Selective Silicon Epitaxy.” Japanese Journal of Applied Physics, vol. 49, no. 3, Mar. 2010, pp. 036505–036504. EBSCOhost, https://doi.org/10.1143/JJAP.49.036505.

APA

Kikuchi, Y., Tateshita, Y., Miyanami, Y., Wakabayashi, H., Tagawa, Y., & Nagashima, N. (2010). Planar Metal--Oxide--Semiconductor Field-Effect Transistors with Raised Source and Drain Extensions Fabricated by In situBoron-Doped Selective Silicon Epitaxy. Japanese Journal of Applied Physics, 49(3), 036505–036504. https://doi.org/10.1143/JJAP.49.036505

Chicago

Kikuchi, Yoshiaki, Yasushi Tateshita, Yuki Miyanami, Hitoshi Wakabayashi, Yukio Tagawa, and Naoki Nagashima. 2010. “Planar Metal--Oxide--Semiconductor Field-Effect Transistors with Raised Source and Drain Extensions Fabricated by In SituBoron-Doped Selective Silicon Epitaxy.” Japanese Journal of Applied Physics 49 (3): 036505–036504. doi:10.1143/JJAP.49.036505.