Si-Based Single-Dopant Atom Devices

MLA

Tabe, Michiharu, et al. “Si-Based Single-Dopant Atom Devices.” Advanced Materials Research, vol. 222, no. 1, Apr. 2011, pp. 205–08. EBSCOhost, https://doi.org/10.4028/www.scientific.net/AMR.222.205.

APA

Tabe, M., Moraru, D., Udhiarto, A., Miki, S., Anwar, M., Kawai, Y., & Mizuno, T. (2011). Si-Based Single-Dopant Atom Devices. Advanced Materials Research, 222(1), 205–208. https://doi.org/10.4028/www.scientific.net/AMR.222.205

Chicago

Tabe, Michiharu, Daniel Moraru, Arief Udhiarto, Sakito Miki, Miftahul Anwar, Yuya Kawai, and Takeshi Mizuno. 2011. “Si-Based Single-Dopant Atom Devices.” Advanced Materials Research 222 (1): 205–8. doi:10.4028/www.scientific.net/AMR.222.205.