High resolution electron microscopy of amorphous interlayers between metal thin films and silicon

Authors :: Chen, L.J.
Lin, J.H.
Lee, T.L.
Luo, C.H.
Hsieh, W.Y.
Liang, J.M.
Wang, M.H.
Source :: Microscopy Research and Technique; January 1998, Vol. 40 Issue: 2 p136-151, 16p
Publication Year :: 1998
Abstract: High‐resolution electron microscopy of amorphous interlayers (a‐interlayer) formed by solid‐state diffusion between metal thin films and silicon is reviewed. In this paper, an overview of the development is presented. Pertinent data obtained on the growth kinetics and structure of a‐interlayers in polycrystalline metal thin films on single‐crystal silicon are reported.

Language :: English
ISSN :: 1059910X and 10970029
Volume :: 40
Issue :: 2
Database :: Supplemental Index
Journal :: Microscopy Research and Technique
Publication Type :: Periodical
Accession number :: ejs24575874
Full Text :: https://doi.org/10.1002/(SICI)1097-0029(19980115)40:2<136::AID-JEMT5>3.0.CO;2-T

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