A particular epitaxial Si~1~-~yC~y alloy growth mode on Si(001) evidenced by cross-sectional transmission electron microscopy

MLA

Claverie, A., et al. “A Particular Epitaxial Si~1~-~yC~y Alloy Growth Mode on Si(001) Evidenced by Cross-Sectional Transmission Electron Microscopy.” Journal of Crystal Growth, vol. 157, no. 1, Jan. 1995, pp. 420–25. EBSCOhost, https://doi.org/10.1016/0022-0248(95)00335-5.

APA

Claverie, A., Faure, J., Balladore, J. L., Simon, L., Mesli, A., Diani, M., Kubler, L., & Aubel, D. (1995). A particular epitaxial Si~1~-~yC~y alloy growth mode on Si(001) evidenced by cross-sectional transmission electron microscopy. Journal of Crystal Growth, 157(1), 420–425. https://doi.org/10.1016/0022-0248(95)00335-5

Chicago

Claverie, A., J. Faure, J. L. Balladore, L. Simon, A. Mesli, M. Diani, L. Kubler, and D. Aubel. 1995. “A Particular Epitaxial Si~1~-~yC~y Alloy Growth Mode on Si(001) Evidenced by Cross-Sectional Transmission Electron Microscopy.” Journal of Crystal Growth 157 (1): 420–25. doi:10.1016/0022-0248(95)00335-5.