Correlation of ordering formation and surface structure in (GaIn)P using modulated MOVPE

Modulated metalorganic vapour phase epitaxial growth (MOVPE) is used to clarify the role of the surface conditions on the ordering behaviour in ternary (GaIn)P layers. The alternating deposition of GaP and InP layers with individual thicknesses of up to one monolayer is successfully used for the growth of (GaIn)P bulk layers lattice matched to (100) GaAs substrates with various off-orientations. The layer quality and the degree of ordering are investigated using high-resolution X-ray diffraction (XRD), transmission electron microscopy (TEM), and photoluminescence spectroscopy (PL), respectively. The application of modulated growth conditions for the deposition of (GaIn)P bulk layers has a strong influence on the degree of ordering achieved in the intermediate growth temperature regime where the highest degree of ordering occurs under continuous MOVPE. Beside a new boundary structure observed in layers grown under modulated flux conditions, the successful growth of highly ordered (GaIn)P layers grown using the modulated MOVPE technique support the model that up to 2 monolayers of the (GaIn)P growth surface are involved in the ordering formation process.