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Degradation of d.c. parameters in enhancement mode WNx self-aligned gate GaAs MESFETs under high temperature stress
- Source :
- Microelectronics Reliability; 1999, Vol. 39 Issue: 12 p1793-1800, 8p
- Publication Year :
- 1999
Details
- Language :
- English
- ISSN :
- 00262714
- Volume :
- 39
- Issue :
- 12
- Database :
- Supplemental Index
- Journal :
- Microelectronics Reliability
- Publication Type :
- Periodical
- Accession number :
- ejs2662460
- Full Text :
- https://doi.org/10.1016/S0026-2714(99)00187-0