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Epitaxial growth of Fe on sulphur-passivated GaAs(100): a method for preventing As interdiffusion
- Source :
- Surface Science; 1996, Vol. 346 Issue: 1 p145-157, 13p
- Publication Year :
- 1996
Details
- Language :
- English
- ISSN :
- 00396028
- Volume :
- 346
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Surface Science
- Publication Type :
- Periodical
- Accession number :
- ejs2722529
- Full Text :
- https://doi.org/10.1016/0039-6028(95)00941-8