Strained SiGe-alloy layers formed by solid phase epitaxial growth of Ge^+ ion implanted silicon

Details

Language :

English

ISSN :

0168583X

Volume :

122

Issue :

4

Database :

Supplemental Index

Journal :

Nuclear Instruments and Methods in Physics Research Section B

Publication Type :

Periodical

Accession number :

ejs2946034

Full Text :

https://doi.org/10.1016/S0168-583X(96)00824-5