Back to Search
Start Over
Correction to Breakdown of High-Performance Monolayer MoS2Transistors
- Source :
- ACS Nano; April 2013, Vol. 7 Issue: 4 p3730-3730, 1p
- Publication Year :
- 2013
Details
- Language :
- English
- ISSN :
- 19360851 and 1936086X
- Volume :
- 7
- Issue :
- 4
- Database :
- Supplemental Index
- Journal :
- ACS Nano
- Publication Type :
- Periodical
- Accession number :
- ejs29856849
- Full Text :
- https://doi.org/10.1021/nn400554k