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Depth distribution of carrier lifetimes in semipolar (11macron01) GaN grown by MOCVD on patterned Si substrates
- Source :
- Proceedings of SPIE; March 2013, Vol. 8625 Issue: 1 p86252G-86252G-7, 776276p
- Publication Year :
- 2013
Details
- Language :
- English
- ISSN :
- 0277786X
- Volume :
- 8625
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Proceedings of SPIE
- Publication Type :
- Periodical
- Accession number :
- ejs31090724
- Full Text :
- https://doi.org/10.1117/12.2005514