Low-noise Brillouin laser on a chip at 1064  nm

We demonstrate narrow-linewidth-stimulated Brillouin lasers at 1064 nm from ultra-high-Q silica wedge disk resonators on silicon. Fundamental Schawlow–Townes frequency noise of the laser is on the order of 0.1  Hz^2/Hz. The technical noise spectrum of the on-chip Brillouin laser is close to the thermodynamic noise limit of the resonator (thermorefractive noise) and is comparable to that of ultra-narrow-linewidth Nd:YAG lasers. The relative intensity noise of the Brillouin laser also is reduced by using an intensity-stabilized pump laser. Finally, low-noise microwave synthesis up to 32 GHz is demonstrated by heterodyne of first and third Brillouin Stokes lines from a single resonator.