Low temperature epitaxial growth of germanium islands in active regions of silicon interband tunneling diodes

MLA

Dashiell, M. W., et al. “Low Temperature Epitaxial Growth of Germanium Islands in Active Regions of Silicon Interband Tunneling Diodes.” Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 89, no. 1–3, Jan. 2002, pp. 106–10. EBSCOhost, https://doi.org/10.1016/S0921-5107(01)00811-X.

APA

Dashiell, M. W., Muller, C., Jin-Phillipp, N. Y., Denker, U., Schmidt, O. G., & Eberl, K. (2002). Low temperature epitaxial growth of germanium islands in active regions of silicon interband tunneling diodes. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 89(1–3), 106–110. https://doi.org/10.1016/S0921-5107(01)00811-X

Chicago

Dashiell, M. W., C. Muller, N. Y. Jin-Phillipp, U. Denker, O. G. Schmidt, and K. Eberl. 2002. “Low Temperature Epitaxial Growth of Germanium Islands in Active Regions of Silicon Interband Tunneling Diodes.” Materials Science and Engineering B: Solid-State Materials for Advanced Technology 89 (1–3): 106–10. doi:10.1016/S0921-5107(01)00811-X.