Formation and Characterization of PbxCd1-xS Interlayer for PbS/CdS/ZnS Quantum Dots Sensitized Solar Cells

Pb_xCd_1-xS quantum dots (QDs) was successfully deposited on TiO₂ mesoporous film as TiO₂ mesoporous photoanode using successive ionic layer adsorption and reaction (SILAR) method for quantum dot sensitized solar cells (QDSSCs). Quantum dot sensitized solar cells (QDSSCs) were prepared by sandwiching the TiO₂ mesoporous photoanode with Cu₂S counter electrode. Single layer of Pb_xCd_1-xS, PbS and CdS and multilayer of PbS/CdS/ZnS as well as multilayer PbS/Pb_xCd_1-xS/CdS/ZnS were prepared for characterizations. The characterizations including X-ray Diffraction Spectroscopy (XRD), Field Emission Scanning Electron Microscopy (FESEM), UV-visible spectrophotometer and Current-density voltage (J-V) measurement were carried out to study the effects of number of SILAR cycles of Pb_xCd_1-xS interlayer for molar fraction, x of 0.2 in QDSSCs. Pb_xCd_1-xS interlayer with four SILAR cycles is incorporated between PbS and CdS layer will increase the efficiency in QDSSCS.