Influence of Codoping on the Magnetoresistance of Paramagnetic (Ga,Mn)As

We studied the correlation between magnetoresistance (MR) effects and the type of conducti- vity in paramagnetic Ga1−xMnxAs with x< 0.5%. Series of samples of (Ga,Mn)As with different codoping levels of Te have been prepared by metal-organic vapor-phase epitaxy (MOVPE). With increasing Mn-content from doping levels to x= 0.5% in paramagnetic Ga1−xMnxAs, the MR at 1.6 K changes continuously from positive to strongly negative. This manifests the complex interplay between p–d exchange induced valence band splitting and the metal–insulator transition. Codoping with Te leads eventually to a dominant conduction band transport. It is characterized by a small negative contribution at low magnetic fields to the parabolic MR similar to that found in highly n-doped diamagnetic semiconductors. It shows that the Mn-induced conduction band splitting is much smaller than the valence band splitting, i.e., |N0α| ≪ |N0β|.