Effect of Ga Pre-Deposition Rate on GaAs Nanowires Grown by Self-Assisted VLS Method Using MBE on SiO2/Si(111) Substrates

We report on the study on effect of Ga pre-deposition rate on GaAs nanowires grown by self-assisted vapor-liquid-solid (VLS) method. Ga droplets were initially deposited on the surface of Si(111) substrates covered with thin layer of SiO₂. The nanowires were grown by molecular beam epitaxy (MBE). Dependency of structural of nanowires on Ga pre-deposition rate is investigated by Scanning Electron Microscope (SEM), Energy-dispersive X-ray spectroscopy (EDX), and X-ray Diffraction Analysis (XRD). The experimental results show that the different in Ga pre-deposition rate significantly affect the surface morphology of samples. Growth rate and the density of nanowires strongly depends on the Ga pre-deposition rate.