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ChemInform Abstract: Electrical and Metallurgical Characterization of Niobium as a Diffusion Barrier Between Aluminum and Silicon for Integrated Circuit Devices.
- Source :
- ChemInform; September 1989, Vol. 20 Issue: 38 pno-no
- Publication Year :
- 1989
-
Abstract
- It is found that niobium is an excellent diffusion barrier to Al and Si that is thermally much more stable than titanium.
Details
- Language :
- English
- ISSN :
- 09317597 and 15222667
- Volume :
- 20
- Issue :
- 38
- Database :
- Supplemental Index
- Journal :
- ChemInform
- Publication Type :
- Periodical
- Accession number :
- ejs39168955
- Full Text :
- https://doi.org/10.1002/chin.198938370