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Chemically Homogeneous and Thermally Robust Ni1–xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition
- Source :
- ACS Applied Materials & Interfaces; January 2017, Vol. 9 Issue: 1 p566-572, 7p
- Publication Year :
- 2017
-
Abstract
- To synthesize a thermally robust Ni1–xPtxSi film suitable for ultrashallow junctions in advanced metal-oxide-semiconductor field-effect transistors, we used a continuous laser beam to carry out millisecond annealing (MSA) on a preformed Ni-rich silicide film at a local surface temperature above 1000 °C while heating the substrate to initiate a phase transition. The melting and quenching process by this unique high-temperature MSA process formed a Ni1–xPtxSi film with homogeneous Pt distribution across the entire film thickness. After additional substantial thermal treatment up to 800 °C, the noble Ni1–xPtxSi film maintained a low-resistive phase without agglomeration and even exhibited interface flattening with the underlying Si substrate.
Details
- Language :
- English
- ISSN :
- 19448244
- Volume :
- 9
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- ACS Applied Materials & Interfaces
- Publication Type :
- Periodical
- Accession number :
- ejs40809001
- Full Text :
- https://doi.org/10.1021/acsami.6b12968