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The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAs
- Source :
- Applied Physics Letters; November 1981, Vol. 39 Issue: 10 p800-803, 4p
- Publication Year :
- 1981
Details
- Language :
- English
- ISSN :
- 00036951 and 10773118
- Volume :
- 39
- Issue :
- 10
- Database :
- Supplemental Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Periodical
- Accession number :
- ejs41974619
- Full Text :
- https://doi.org/10.1063/1.92562