Influence of the n+Layer on the Gain of Electron‐Excited Silicon Diode Array Targets

Details

Language :

English

ISSN :

00218979 and 10897550

Volume :

41

Issue :

12

Database :

Supplemental Index

Journal :

Journal of Applied Physics

Publication Type :

Periodical

Accession number :

ejs43738859

Full Text :

https://doi.org/10.1063/1.1658591