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Reproducible Liquid‐Phase‐Epitaxial Growth of Double Heterostructure GaAs–AlxGa1−xAs Laser Diodes
- Source :
- Journal of Applied Physics; June 1972, Vol. 43 Issue: 6 p2817-2826, 10p
- Publication Year :
- 1972
Details
- Language :
- English
- ISSN :
- 00218979 and 10897550
- Volume :
- 43
- Issue :
- 6
- Database :
- Supplemental Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Periodical
- Accession number :
- ejs43740035
- Full Text :
- https://doi.org/10.1063/1.1661601