Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH3‐MBE

MLA

Rennesson, Stephanie, et al. “Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH3‐MBE.” Physica Status Solidi (A) - Applications and Materials Science, vol. 215, no. 9, May 2018. EBSCOhost, https://doi.org/10.1002/pssa.201700640.

APA

Rennesson, S., Leroux, M., Al Khalfioui, M., Nemoz, M., Chenot, S., Massies, J., Largeau, L., Dogmus, E., Zegaoui, M., Medjdoub, F., & Semond, F. (2018). Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH3‐MBE. Physica Status Solidi (A) - Applications and Materials Science, 215(9). https://doi.org/10.1002/pssa.201700640

Chicago

Rennesson, Stephanie, Mathieu Leroux, Mohamed Al Khalfioui, Maud Nemoz, Sébastien Chenot, Jean Massies, Ludovic Largeau, et al. 2018. “Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH3‐MBE.” Physica Status Solidi (A) - Applications and Materials Science 215 (9). doi:10.1002/pssa.201700640.