High-Performance Graphene/β-Ga2O3Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication

MLA

Lin, Richeng, et al. “High-Performance Graphene/β-Ga2O3Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication.” ACS Applied Materials & Interfaces, vol. 10, no. 26, July 2018, pp. 22419–26. EBSCOhost, https://doi.org/10.1021/acsami.8b05336.

APA

Lin, R., Zheng, W., Zhang, D., Zhang, Z., Liao, Q., Yang, L., & Huang, F. (2018). High-Performance Graphene/β-Ga2O3Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication. ACS Applied Materials & Interfaces, 10(26), 22419–22426. https://doi.org/10.1021/acsami.8b05336

Chicago

Lin, Richeng, Wei Zheng, Dan Zhang, Zhaojun Zhang, Qixian Liao, Lu Yang, and Feng Huang. 2018. “High-Performance Graphene/β-Ga2O3Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication.” ACS Applied Materials & Interfaces 10 (26): 22419–26. doi:10.1021/acsami.8b05336.