Influence of Silicon on the Nucleation Rate of GaAs Nanowires on Silicon Substrates

MLA

Hijazi, Hadi, et al. “Influence of Silicon on the Nucleation Rate of GaAs Nanowires on Silicon Substrates.” The Journal of Physical Chemistry - Part C, vol. 122, no. 33, Aug. 2018, pp. 19230–35. EBSCOhost, https://doi.org/10.1021/acs.jpcc.8b05459.

APA

Hijazi, H., Dubrovskii, V. G., Monier, G., Gil, E., Leroux, C., Avit, G., Trassoudaine, A., Bougerol, C., Castellucci, D., Robert-Goumet, C., & André, Y. (2018). Influence of Silicon on the Nucleation Rate of GaAs Nanowires on Silicon Substrates. The Journal of Physical Chemistry - Part C, 122(33), 19230–19235. https://doi.org/10.1021/acs.jpcc.8b05459

Chicago

Hijazi, Hadi, Vladimir G. Dubrovskii, Guillaume Monier, Evelyne Gil, Christine Leroux, Geoffrey Avit, Agnès Trassoudaine, et al. 2018. “Influence of Silicon on the Nucleation Rate of GaAs Nanowires on Silicon Substrates.” The Journal of Physical Chemistry - Part C 122 (33): 19230–35. doi:10.1021/acs.jpcc.8b05459.