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A phenomenological study of meniscus lines on the surfaces of GaAs layers grown by LPE

Authors :
Small, M.B.
Blakeslee, A.E.
Shih, K.K.
Potemski, R.M.
Source :
Journal of Crystal Growth; September 1975, Vol. 30 Issue: 2 p257-266, 10p
Publication Year :
1975

Abstract

The phenomenon of “meniscus lines” on the surfaces of liquid phase epitaxial layers of GaAs is described, and it is shown that these are associated with a “stick-slip” motion of the edge of the liquid as it is removed from the surface. Mechanisms which may account for the creation of this phenomenon are postulated.

Details

Language :
English
ISSN :
00220248
Volume :
30
Issue :
2
Database :
Supplemental Index
Journal :
Journal of Crystal Growth
Publication Type :
Periodical
Accession number :
ejs47116624
Full Text :
https://doi.org/10.1016/0022-0248(75)90097-4