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A phenomenological study of meniscus lines on the surfaces of GaAs layers grown by LPE
- Source :
- Journal of Crystal Growth; September 1975, Vol. 30 Issue: 2 p257-266, 10p
- Publication Year :
- 1975
-
Abstract
- The phenomenon of “meniscus lines” on the surfaces of liquid phase epitaxial layers of GaAs is described, and it is shown that these are associated with a “stick-slip” motion of the edge of the liquid as it is removed from the surface. Mechanisms which may account for the creation of this phenomenon are postulated.
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 30
- Issue :
- 2
- Database :
- Supplemental Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Periodical
- Accession number :
- ejs47116624
- Full Text :
- https://doi.org/10.1016/0022-0248(75)90097-4