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Lead Acetate Assisted Interface Engineering for Highly Efficient and Stable Perovskite Solar Cells

Authors :
Zhang, Yuanyuan
Ma, Yongchao
Shin, Insoo
Jung, Yun Kyung
Lee, Bo Ram
Wu, Sangwook
Jeong, Jung Hyun
Lee, Byoung Hoon
Kim, Joo Hyun
Kim, Kwang Ho
Park, Sung Heum
Source :
ACS Applied Materials & Interfaces; February 2020, Vol. 12 Issue: 6 p7186-7197, 12p
Publication Year :
2020

Abstract

High power conversion efficiency (PCE) and long-term stability are inevitable issues faced in practical device applications of perovskite solar cells. In this paper, significant enhancements in the device efficiency and stability are achieved by using a surface-active lead acetate (Pb(OAc)2) at the top or bottom of CH3NH3PbI3(MAPbI3)-based perovskite. When a saturated Pb(OAc)2solution is introduced on the top of the MAPbI3perovskite precursor, the OAc–in Pb(OAc)2participates in lattice restructuring of MAPbI3to form MAPbI3–x(OAc)x, thereby producing a high-quality perovskite film with high crystallinity, large grain sizes, and uniform and pinhole-free morphology. Moreover, when Pb(OAc)2solution is mixed in the poly(3,4-ethylenedioxythiophene)–poly(styrenesulfonate) (PEDOT–PSS) solution in the bottom way, the OAc–in Pb(OAc)2improves the water resistance of PEDOT–PSS. As the OAc–easily bonds with the Pb2+, the deposition of MAPbI3precursor onto the Pb(OAc)2mixed with PEDOT–PSS results in a reduction of the uncoordinated Pb, leading to strong stabilization of the perovskite layer. Both the top- and bottom-treated devices exhibit enhanced PCE values of 18.93% and 18.28%, respectively, compared to the conventional device with a PCE of 16.47%, which originates from decreased trap sites and reduced energy barriers. In particular, the bottom-treated device exhibits long-term stability, with more than 84% of its initial PCE over 800 h in an ambient environment.

Details

Language :
English
ISSN :
19448244
Volume :
12
Issue :
6
Database :
Supplemental Index
Journal :
ACS Applied Materials & Interfaces
Publication Type :
Periodical
Accession number :
ejs52107103
Full Text :
https://doi.org/10.1021/acsami.9b19691