Charge Trapping Memory Characteristics of p-Si/Ultrathin Al2O3????(?HfO2?)?0.8?(?Al2O3?)?0.2???Al2O3/Metal Multilayer Structure

Memory properties of p-Si/ultrathin /metal capacitors have been investigated, in which all the high- dielectric films were derived by atomic layer deposition technique. Using a film as the charge trapping layer, a large memory window of and a high charge trap density of have been achieved. A 53% initial memory window can still be maintained after of retention even after adopting an ultrathin tunneling layer of . The experimental results also demonstrated that adding into films can improve the memory characteristics as compared with the memory capacitors employing pure as the charge trapping layer.