(Invited) 2D Semiconductor Materials for Thin Film Transistor Applications

We briefly introduce the main physical properties, as well as synthesis methods and device characteristics of novel two-dimensional (2D) materials such as transition metal dichalcogenides (TMDCs) and phosphorene. These 2D materials which can be real semiconductors (as opposed to graphene) offer new possibilities in terms of device properties/characteristics, particularly regarding the scaling down of the ever shrinking individual transistor. Their properties (forbidden gap, carrier mobility values) can be tailored by controlling their thickness and their dielectric environment. For TMDCs, alloying is another way of modifying intrinsic material's properties such as the band gap. Room temperature field-effect carrier mobility values as high as 700 cm2/Vs (electrons) and 5200 cm2/Vs (holes) have been measured for TMDCs and phosphorene respectively. Also, Ion/Ioff ratios over 108 have been reported for MoS2 transistors. Applications will soon emerge in the area of electronics, particularly flexible electronics as well as opto-electronics.