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SiGe HBT featuring fT > 600GHz at Cryogenic Temperature
- Source :
- ECS Transactions; October 2008, Vol. 16 Issue: 10 p1069-1077, 9p
- Publication Year :
- 2008
-
Abstract
- A comparison of electrical performances of state-of-the-art SiGe heterojunction bipolar transistors at low temperature is presented. The performances increase results from the diminution of transit times thanks to the rise of non-stationary transport, the relative increase of the transconductance with the reduction of self-heating effects, and the decrease of access resistances.
Details
- Language :
- English
- ISSN :
- 19385862 and 19386737
- Volume :
- 16
- Issue :
- 10
- Database :
- Supplemental Index
- Journal :
- ECS Transactions
- Publication Type :
- Periodical
- Accession number :
- ejs52653085