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Charge and Thermoelectric Transport in Polymer-Sorted Semiconducting Single-Walled Carbon Nanotube Networks
- Source :
- ACS Nano; November 2020, Vol. 14 Issue: 11 p15552-15565, 14p
- Publication Year :
- 2020
-
Abstract
- Understanding the charge transport mechanisms in chirality-selected single-walled carbon nanotube (SWCNT) networks and the influence of network parameters is essential for further advances of their optoelectronic and thermoelectric applications. Here, we report on charge density and temperature-dependent field-effect mobility and on-chip field-effect-modulated Seebeck coefficient measurements of polymer-sorted monochiral small-diameter (6,5) (0.76 nm) and mixed large-diameter SWCNT (1.17–1.55 nm) networks (plasma torch nanotubes, RN) with different network densities and length distributions. All untreated networks display balanced ambipolar transport and electron–hole symmetric Seebeck coefficients. We show that charge and thermoelectric transport in SWCNT networks can be modeled by the Boltzmann transport formalism, incorporating transport in heterogeneous media and fluctuation-induced tunneling. Considering the diameter-dependent one-dimensional density of states (DoS) of the SWCNTs composing the network, we can simulate the charge density and temperature-dependent Seebeck coefficients. Our simulations suggest that scattering in these networks cannot be described as simple one-dimensional acoustic and optical phonon scattering as for single SWCNTs. Instead the relaxation time is inversely proportional to energy (τ ∝ (E– EC)s, s= −1, ECbeing the energy of the first van Hove singularity), presumably pointing toward the more two-dimensional character of scattering events and the necessity to include scattering at the SWCNT junctions. Finally, our observation of higher power factors in trap-free, 1,2,4,5-tetrakis(tetramethylguanidino)benzene-treated (6,5) networks than in the RN networks emphasizes the importance of chirality selection to tune the width of the DoS. To benefit from both higher intrinsic mobilities and a large thermally accessible DoS, we propose trap-free, narrow DoS distribution, large-diameter SWCNT networks for both electronic and thermoelectric applications.
Details
- Language :
- English
- ISSN :
- 19360851 and 1936086X
- Volume :
- 14
- Issue :
- 11
- Database :
- Supplemental Index
- Journal :
- ACS Nano
- Publication Type :
- Periodical
- Accession number :
- ejs54589699
- Full Text :
- https://doi.org/10.1021/acsnano.0c06181