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Volatile/Nonvolatile Dual-Functional Atom Transistor

Authors :
Hasegawa, Tsuyoshi
Itoh, Yaomi
Tanaka, Hirofumi
Hino, Takami
Tsuruoka, Tohru
Terabe, Kazuya
Miyazaki, Hisao
Tsukagoshi, Kazuhito
Ogawa, Takuji
Yamaguchi, Shu
Aono, Masakazu
Source :
Applied Physics Express (APEX); January 2011, Vol. 4 Issue: 1 p015204-015204, 1p
Publication Year :
2011

Abstract

We demonstrate a conceptually new atom transistor operation by electric-field control of the nanoionic state. The new atom transistor possesses novel characteristics, such as dual functionality of selective volatile and nonvolatile operations, very small power consumption (pW), and a high ON/OFF ratio [106(volatile operation) to 108(nonvolatile operation)], in addition to complementary metal oxide semiconductor (CMOS) process compatibility enabling the development of future computing systems that fully utilize highly-integrated CMOS technology. Cyclic endurance of 104times switching was achieved with the prototype.

Details

Language :
English
ISSN :
18820778 and 18820786
Volume :
4
Issue :
1
Database :
Supplemental Index
Journal :
Applied Physics Express (APEX)
Publication Type :
Periodical
Accession number :
ejs55893008
Full Text :
https://doi.org/10.1143/APEX.4.015204