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Atomic Force Microscopy and Infrared Spectroscopy Studies of Hydrogen Baked Si Surfaces

Atomic Force Microscopy and Infrared Spectroscopy Studies of Hydrogen Baked Si Surfaces

Authors :
Vatel, Olivier
Verhaverbeke, Steven
Bender, Hugo
Caymax, Matty
Chollet, Frederic
Vermeire, Bert
Mertens, Paul
André, Elie
Marc Heyns, Marc Heyns
Source :
Japanese Journal of Applied Physics; October 1993, Vol. 32 Issue: 10 pL1489-L1489, 1p
Publication Year :
1993

Abstract

A H2pre-bake at temperatures over 1050°C is typically used prior to Si epitaxial growth. In this study surface microroughness probed with tapping mode Atomic Force Microscopy (AFM) is correlated with multiple internal reflection infrared spectroscopy measurements for the different steps involved before epitaxy. A novel sample preparation technique was used for the multiple internal reflection set-up. A strong correlation was found between the presence of surface terraces and the IR double monohydride peaks for H2annealed Si surfaces. We therefore put forward that the terraces are due to the H2pre-bake step. These terraces remain after epitaxial deposition.

Details

Language :
English
ISSN :
00214922 and 13474065
Volume :
32
Issue :
10
Database :
Supplemental Index
Journal :
Japanese Journal of Applied Physics
Publication Type :
Periodical
Accession number :
ejs56124684
Full Text :
https://doi.org/10.1143/JJAP.32.L1489