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Atomic Force Microscopy and Infrared Spectroscopy Studies of Hydrogen Baked Si Surfaces
Atomic Force Microscopy and Infrared Spectroscopy Studies of Hydrogen Baked Si Surfaces
- Source :
- Japanese Journal of Applied Physics; October 1993, Vol. 32 Issue: 10 pL1489-L1489, 1p
- Publication Year :
- 1993
-
Abstract
- A H2pre-bake at temperatures over 1050°C is typically used prior to Si epitaxial growth. In this study surface microroughness probed with tapping mode Atomic Force Microscopy (AFM) is correlated with multiple internal reflection infrared spectroscopy measurements for the different steps involved before epitaxy. A novel sample preparation technique was used for the multiple internal reflection set-up. A strong correlation was found between the presence of surface terraces and the IR double monohydride peaks for H2annealed Si surfaces. We therefore put forward that the terraces are due to the H2pre-bake step. These terraces remain after epitaxial deposition.
Details
- Language :
- English
- ISSN :
- 00214922 and 13474065
- Volume :
- 32
- Issue :
- 10
- Database :
- Supplemental Index
- Journal :
- Japanese Journal of Applied Physics
- Publication Type :
- Periodical
- Accession number :
- ejs56124684
- Full Text :
- https://doi.org/10.1143/JJAP.32.L1489